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| PD - 95566 IRG4PC60FPBF INSULATED GATE BIPOLAR TRANSISTOR Features Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. Industry standard TO-247AC package. Lead-Free C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.50V @VGE = 15V, IC = 60A n-channel Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed for best performance when used with IR Hexfred & IR Fred companion diodes. Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. TO-247AC Max. 600 90 60 120 120 20 200 520 210 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbfin (1.1Nm) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. 0.24 6 (0.21) Max. 0.24 40 Units C/W g (oz) www.irf.com 1 07/15/04 IRG4PC60FPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 Emitter-to-Collector Breakdown Voltage 16 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.13 1.5 VCE(ON) Collector-to-Emitter Saturation Voltage 1.7 1.5 VGE(th) Gate Threshold Voltage 3.0 V GE(th)/TJ Temperature Coeff. of Threshold Voltage -11 gfe Forward Transconductance 36 69 ICES Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS Max. Units Conditions V VGE = 0V, IC = 250A V VGE = 0V, IC = 1.0A V/C VGE = 0V, IC = 1.0mA VGE = 15V 1.8 IC = 60A IC = 90A See Fig.2, 5 V IC = 60A , TJ = 150C 6.0 VCE = VGE, IC = 250A mV/C VCE = VGE, IC = 250A S VCE = 100V, IC = 60A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 600V, TJ = 150C 100 n A VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. 290 40 100 42 66 310 170 0.30 4.6 4.9 39 66 470 300 8.8 13 6050 360 66 Max. Units Conditions 340 IC = 40A 47 nC VCC = 400V See Fig. 8 130 VGE = 15V TJ = 25C ns 360 IC = 60A, VCC = 480V 220 VGE = 15V, RG = 5.0 Energy losses include "tail" mJ See Fig. 10, 11, 13, 14 6.3 TJ = 150C, IC = 60A, VCC = 480V ns VGE = 15V, RG = 5.0 Energy losses include "tail" mJ See Fig. 13, 14 nH Measured 5mm from package VGE = 0V pF VCC = 30V See Fig. 7 = 1.0MHz Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) RG = 5.0. (See fig. 13a) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. VCC = 80%(VCES), VGE = 20V, L = TBD H, Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4PC60FPBF 160 Square wave: 60% of rated voltage Triangular wave: 120 Load Current ( A ) Ideal diodes Clamp voltage: 80% of rated 80 40 For both: Duty cycle : 50% Tj = 125C Tsink = 90C Gate drive as specified Power Dissipation = 73W 0.1 1 10 100 0 f , Frequency ( kHz ) (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) Fig. 1 - Typical Load Current vs. Frequency 1000 IC, Collector t-to-Emitter Current (A) IC, Collector-to-Emitter Current (A) 1000 100 T J = 150C 100 T J = 150C 10 10 1 T J = 25C VGE = 15V 20s PULSE WIDTH 0.0 1.0 2.0 3.0 4.0 5.0 1 TJ = 25C VCC = 10V 5s PULSE WIDTH 0.01 4 5 6 7 8 9 10 11 0.1 0.1 0.01 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4PC60FPBF 100 3.0 VCE , Collector-to Emitter Voltage (V) Maximum DC Collector Current (A) 90 80 70 60 50 40 30 20 10 0 25 50 75 100 V GE = 15V VGE = 15V 80s PULSE WIDTH IC = 120A 2.0 IC = 60A IC = 30A 1.0 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C, Case Temperature (C) TJ , Junction Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 ) thJC D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T J = P DM t1 / t 2 x Z thJC 0.1 +TC 1 Thermal Response (Z 0.001 0.00001 0.0001 0.001 0.01 t1, Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC60FPBF 100000 VGE = 0V, f = 1 MHZ Cies = C + Cgc, C ge ce SHORTED Cres = C ce Coes = C + Cgc ce VGE , Gate-to-Emitter Voltage (V) 20 V CC = 400V IC = 40A 10000 15 Capacitance (pF) Cies 1000 10 Coes 100 5 Cres 10 0 100 200 300 400 500 0 0 50 100 150 200 250 300 VCE (V) QG, Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 8.00 VCC = 480V VGE = 15V TJ = 25C 7.00 I C = 60A 100 RG = 5.0 VGE = 15V Total Switching Losses (mJ) Total Switching Losses (mJ) VCC = 480V IC = 120A 6.00 10 IC = 60A 5.00 IC = 30A 4.00 0 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R G, Gate Resistance () T J, Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC60FPBF 30.0 1000 VCC = 480V 20.0 IC, Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG = 5.0 TJ = 150C VGE = 15V VGE = 20V T J = 125 100 SAFE OPERATING AREA 10.0 10 0.0 30 50 70 90 110 130 1 0.1 1 10 100 1000 IC, Collector Current (A) VDS, Drain-to-Source Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PC60FPBF L 50V 1000V VC * D.U.T. RL = 0 - 480V 480V 4 X IC@25C c 480F 960V d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V D.U.T. VC Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V A 1000V d e c d 90% e VC 90% 10% t d(off) Fig. 14b - Switching Loss Waveforms 10% I C 5% t d(on) tr E on E ts = (Eon +Eoff ) tf t=5s E off www.irf.com 7 IRG4PC60FPBF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRF PE30 WIT H AS S EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2000 IN T HE AS S EMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" PART NUMBER INT ERNAT IONAL RECT IF IE R LOGO AS S EMB LY LOT CODE IRFPE 30 56 035H 57 DAT E CODE YE AR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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